NTD4856N, NVD4856N
TYPICAL PERFORMANCE CURVES
100
90
80
10 V
4V
3.8 V
4.2 V
T J = 25 ° C
3.6 V
130
120
110
100
V DS ≥ 10 V
70
90
60
50
40
3.4 V
3.2 V
80
70
60
50
30
20
10
0
0
1
2
3
4
2.8 V
2.6 V
5
40
30
20
10
0
0
1
T J = 125 ° C
T J = 25 ° C
2
T J = ? 55 ° C
3
4
5
0.04
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.008
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.03
0.02
0.01
I D = 30 A
T J = 25 ° C
0.0075
0.007
0.0065
0.006
0.0055
0.005
0.0045
0.004
0.0035
0.003
0.0025
T J = 25 ° C
V GS = 4.5 V
V GS = 11.5 V
0
2
4
6
8
10
0.002
20
30
40
50
60
70
80
90
100
1.8
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.6
I D = 30 A
V GS = 10 V
V GS = 0 V
T J = 150 ° C
1.4
1.2
1.0
0.8
1000
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
100
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
相关PDF资料
NTD4857NT4G MOSFET N-CH 25V 12A DPAK
NTD4860NT4G MOSFET N-CH 25V 10.4A DPAK
NTD4863NA-35G MOSFET N-CH 25V 49A SGL IPAK
NTD4865NT4G MOSFET N-CH 25V 8.5A DPAK
NTD4904N-1G MOSFET N-CH 30V 79A SGL IPAK
NTD4905N-35G MOSFET N-CH 30V 67A SGL IPAK
NTD4906NT4G MOSFET N-CH 30V 10.3A SGL DPAK
NTD4909NT4G MOSFET N-CH 30V 8.8A SGL DPAK
相关代理商/技术参数
NTD4857N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK
NTD4857N-1G 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4857N-35G 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4857NA-1G 功能描述:MOSFET NFET DPAK 25V 78A 0.0057R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4857NAT4G 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4857NT4G 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK
NTD4858N-1G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube